The global Magneto Resistive RAM (MRRAM) Industry size was valued at USD 307.5 million in 2016 and is presumed to gain traction over the forecast period. The increasing demand for wearables and flexible electronic products is expected to drive the growth for this sector. These electronic products require flexible magnetic memories for processing and storing of data.
MRRAM exceed performance, when compared to traditional NAND, and are much faster, consume lesser power, and are capable of retaining data, even in the absence of power. These memories provide immense scope for growth and have rapid reading and writing capabilities, as compared to DRAMs and SRAMs.
In the coming years, the global Industry is expected to experience an accelerating growth rate, as it holds the potential to replace flash memory and other electrically erasable programmable read-only memory (EEPROM).
The introduction of new products, for embedded and standalone memories, is expected to offer an opportunity for growth, owing to their use in a variety of applications in the enterprise, consumer electronics, robotics, aerospace & defense, and industrial sectors, among others. The Spin Tunnel Torque MRAM (STT) products are expected to contribute to a majority of the growth of the Industry.
Market By Type
The second-generation STT occupied a significant Industry share in the year 2015. This technology is predicted to remain as the preferred choice, owing to its capability of supporting a variety of applications. Moreover, perpendicular Magnetic Tunnel Junction (pMTJ) STT are expected to make major contributions to the industry. This technology is to be launched, in the year 2017, by Everspin Technologies, Inc. The Industry size for toggle type technology is expected to reach USD 1,197.5 million by 2025.
The Industry for STT technology is estimated to dominate in 2017 and is expected to maintain its dominance, over the forecast period. The Industry is expected to grow from USD 198.9 million in 2016 to USD 3,606.4 million by 2025. The DRAM technology is expected to reach its limits in the near future and be replaced by STT technology, owing to the high endurance characteristics of the latter. Various Industry players are working toward this replacement; for instance, Micron is planning to introduce STT-MRAM, a DRAM-replacement product, by 2018.
Market By Application
The enterprise storage application is expected to gain traction in the near future. The Industry is projected to reach a value of USD 1,227.0 million by 2025. This application segment is estimated to grow as MRAM uses less power than flash. Lower power consumption enables operational efficiency for enterprise storage applications.
The Magneto resistive random access memory technology for the aerospace & defense industry is estimated to grow at the highest CAGR of 37.6%, over the forecast period. This can be attributed to the high-temperature endurance of this technology, making it the most favorable option. Also, the technology, owing to its faster reading and writing capabilities, is best suited for consumer electronics applications but the high costs affiliated with designing such devices limit its growth in consumer electronics applications.
Market By Region
The North American region dominated the Industry with more than 36% revenue share in 2015. This dominance can be attributed to the presence of major players coupled with the increasing research & development activities in this region.
Moreover, the imperative need to serve the growing demand, for faster computation, better scalability, and lesser power consumption, is expected to promote the growth of Magneto resistive random access memory devices.
The Asia Pacific region is expected to emerge as the fastest-growing region over the next nine years, owing to the improvements and advancements, in infrastructures of data centers, supported by the increasing adoption of cloud computing and usage of internet. Furthermore, the Industry has high growth opportunities for sales of wearable electronics and mobile phones. The Asia-Pacific region has a number of memory manufacturers and foundry service providers, owing to its low-cost labor and raw material availability.
Major Market Players in this industry are Intel Corporation, Avalanche Technology, Inc., Honeywell International, Inc., Everspin Technologies Inc., NVE Corporation, Qualcomm, Inc., Samsung Electronics Co. Ltd., Spin Transfer Technologies, Toshiba Corporation, and Crocus Nano Electronics LLC, among others.
These players are increasingly focusing on developing new products and innovations to become pioneers of the technology and dominate the Industry. Furthermore, an increasing trend of partnerships and collaborations has been observed in this Industry. For instance, in September 2016, Avalanche Technology, Inc. entered into an agreement with Sony Semiconductors Manufacturing Corporation to initialize the production of Avalanche’s STT-MRAM on 300mm wafers. This partnership aimed to help Avalanche in adopting perpendicular Magnetic Tunnel Junction (pMTJ)-based STT technology.
Magneto Resistive RAM (MRRAM)Industry Segmentation:
Magneto Resistive RAM (MRRAM) Industry Overview, By Type
Magneto Resistive RAM (MRRAM) Industry Overview, By Application
Magneto Resistive RAM (MRRAM) Industry Overview, by Region
Rest of Europe